| 摘要 |
PURPOSE:To enable high reliability and low threshold value by allowing a portion to become a cavity of a laser on a p type substrate to remain, then forming a buried layer, a p type grown layer and an n type grown layer, and forming a p type impurity diffused layer on the n type grown layer and the p type grown layer, and isolating the elements. CONSTITUTION:A p type InP grown layer 10, an In1-xGaxAsyP1-y active layer 11, and an n type InP grown layer 12 are sequentially grown on an n type InP grown layer 12 are sequentially grown on a p type InP substrate 9, this grown layers are etched to a p type InP substrate 9 to allow the grown layers to remain in the striped shape to vecome a cavity of a laser, and n type InP grown layer 13 is selectively grown to the height of the layer 11 during the stripe, a p type InP grown layer 14 is grown thereon, an n type InP grown layer 15 is grown on the entire surface of a wafer. A p type impurity diffused layer 16 is formed to reach the depth of the layer 14 between the stripes of the wafer, an n type electrode is then formed on the surface of the layer 16 in the formation of isolating via an insulating film 17, and a p type electrode 19 is formed. |
