SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To increase carrier density, and to lower resistivity by irradiating zinc selenide or zinc sulfide-selenide by beams of particles containing zinc chloride or hydrogen chloride or chlorine gas through a molecular-beam epitaxy. CONSTITUTION:The upper section of a substratel is irradiated by selenium 5 and sulfur and zinc 4 as molecular beams by using a molecular beam epitaxy, thus growing a zinc selenide crystal 3 or a zinc sulfide-selenide crystal. The upper section of the substrate 1 is irradiated simultaneously by the molecular beams of zinc chloride 6 or hydrogen chloride or chlorine gas, thus adding chlorine to the zinc selenide crystal 3 or the zinc sulfide-selenide crystal as an impurity. Accordingly, carrier density is increased, and resistivity is lowered.