| 摘要 |
PURPOSE:To decrease the number of stages and to improve the adhesiveness to glaze and chemical resistance by using an org. photoresist as a mask material for etching the glaze and introducing a stage for changing a baking temp. CONSTITUTION:After a partially glazed substrate is cleaned, the glaze is baked for 30min at 200-250 deg.C and is dehydrated. A resist is then uniformly coated thereon by a spinner to about 2.5mum at 4,000rpm. The resist is prebaked for 20min at 90 deg.C and is then exposed and developed to form a pattern by the resist; thereafter, the resist is baked for 30min at 250 deg.C in an N2 atmosphere. The resist is cooled after the post baking and is immediately etched. The resist film absorbs moisture and the adhesiveness of the film deteriorates when the resist is rested for several hours after the post baking and therefore, the resist is required to be immediately etched. An etching rate is unstable if an etchant is a not phosphoric acid and contains moisture and therefore, the etching in the state of contg. no moisture is more preferable. |
