| 摘要 |
PURPOSE:To obtain an emitter contact region having an area larger than an emitter region by forming an insulating region to one part of the emitter region as an uppermost layer through ion implantation and shaping the emitter contact region onto the insulating region through film growth. CONSTITUTION:A collector contact layer containing a high-concentration N-type impurity as a collector contact region 52, a collector layer containing the N-type impurity as a collector region 53, a base layer containing a high-concentration P-type impurity as a base region 54, and an emitter layer containing the N-type impurity as an emitter region 55 are formed onto a semi-insulating GaAs substrate 51 through film growth in succession. Oxygen ions are implanted, and one part of the emitter region is insulated, thus shaping an insulating region 57. An emitter contact layer as an emitter contact region 56 is formed through film growth after heat treatment. The heads of the regions 54, 56 are exposed through etching.
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