发明名称 THIN-FILM TRANSISTOR
摘要 <p>PURPOSE:To prevent a short circuit between both a drain electrode and a source electrode by integrally forming both electrodes by an aluminum film and oxidizing and insulating the aluminum film in an isolation section for both electrodes. CONSTITUTION: A gate electrode 3 consisting of chromium and gold, an insulating film 5 composed of a nitride film, an amorphous silicon film 4, and aluminum film patterns obtaining a drain electrode 1, a source electrode 2 and an insulating section 8 are laminated onto a glass substrate 7 in succession. The insulating section 8 made up of porous alumina is shaped by partially anodizing a section between a series of the electrodes 1 and 2 and the electrodes 1, 2 are isolated electrically in the patterns. A black pigment is positioned at the position of the insulating section 8 and screen-printed, and the black pigment is fixed. Both electrodes can electrically be isolated completely without removing aluminum between both electrodes.</p>
申请公布号 JPS62271471(A) 申请公布日期 1987.11.25
申请号 JP19860115066 申请日期 1986.05.20
申请人 SANYO ELECTRIC CO LTD 发明人 IGUCHI HIROSHI
分类号 H01L23/522;G02F1/136;G02F1/1368;H01L21/336;H01L21/768;H01L27/12;H01L29/78;H01L29/786 主分类号 H01L23/522
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