摘要 |
PURPOSE:To improve the precision of the position of assembly, and to enhance heat-dissipating properties by bonding a semiconductor laser so as to be fitted to a heat sink. CONSTITUTION:Sections except a light-emitting section 21a for a semiconductor laser 21 are etched and removed, and sections except the upper surface of the projecting section 21a are irradiated by protons to form a high resistance layer 22. Electrodes 23a, 23b are shaped. A groove 24a to which the projecting section 21a is inserted is formed to a heat sink 24 consisting of Si or the like through potoetching, and the groove 24a and the projecting section 21a are fitted and bonded by solder 25. Consequently, the laser 21 can be assembled with the positional precision of a photoetching technique. The heat of the light- emitting section 21a can be dissipated efficiently to the heat sink 24.
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