发明名称 SURFACE TREATMENT OF SUBSTRATE FOR FORMING METALLIC FILM
摘要 PURPOSE:To efficiently clean the surfaces of a substrate in a short time by placing the substrate between electrodes confronting each other and by impressing RF power having a phase difference on the electrodes to cause RF discharge. CONSTITUTION:Electrodes 19, 20 are arranged so that they confront each other with a long-sized substrate 5 in-between, RF power is impressed on the electrodes 19, 20 to generate plasma 16 and the substrate 5 is exposed to the plasma 16. At this time, a phase difference 23 is set between RF power 21 impressed on the electrode 19 and RF power 22 impressed on the electrode 20. By the phase difference 23, potential gradients are alternately produced in the plasma 16, so ions 18 and electrons 17 in the plasma 16 are alternately attracted and transferred to the electrodes 19, 20 and collide against the substrate 5 with large energy to attain efficient surface treatment.
申请公布号 JPS62270783(A) 申请公布日期 1987.11.25
申请号 JP19860114312 申请日期 1986.05.19
申请人 TOHOKU METAL IND LTD 发明人 UEKI MASAYUKI
分类号 C23C14/02;C23C14/24;C23C14/34;C23C14/56;C23F4/00 主分类号 C23C14/02
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