METHOD FOR FABRICATING SELF-PASSIVATED COMPOSITE SILICON-SILICIDE CONDUCTIVE ELECTRODES

摘要

The method includes depositing a conductive first polysilicon layer on a semiconductor structure, co-depositing on said layer polysilicon and a silicide forming metal in stoichiometric proportions to form an intermetallic compound, and depositing on top of it a second polysilicon layer providing 30 to 100 % of the silicon required to form a silicon dioxide layer in a subsequent thermal oxidation step.
The method is used in fabricating integrated circuit structures e.g. silicon gate MOSFET devices with self-passivating, low resistivity interconnection electrodes where voids in the first polysilicon layer are substantially eliminated.