发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device includes a plurality of memory cell rows each including a plurality of memory cells; a plurality of row selection signal lines each for transmitting a row selection signal to the memory cells of each memory cell row; and a row decoder for giving a row selection signal to the row selection signal line connected to the memory cells on a memory cell row in accordance with the row address input externally, wherein the row selection signal is at a power supply voltage level during a reading-out period, an intermediate voltage level between the power supply voltage and a ground level during the writing-in period, and the ground level at periods other than the writing-in and reading-out periods.
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申请公布号 |
US4709354(A) |
申请公布日期 |
1987.11.24 |
申请号 |
US19850788228 |
申请日期 |
1985.10.16 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ICHINOSE, KATSUKI;SHINOHARA, HIROFUMI |
分类号 |
G11C7/00;G11C8/08;(IPC1-7):G11C11/40 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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