Low temperature deposition of silicon oxides for device fabrication

摘要

Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C. through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature-sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures. More generally, lowered-temperature processing can be applied to the deposition of other materials which include silicon oxide. For example, borophosphosilicate glasses can be deposited by chemical vapor deposition processing involving flash-evaporation of a mixture of liquid precursor reagents.