| 摘要 |
PURPOSE:To hardly cause the deterioration in characteristic and breakdown even if an overcurrent such as electrostatic electricity is applied by connecting a protective diode and capacitor connected in parallel between a bias feed terminal of gate/drain and the ground terminal. CONSTITUTION:A capacitor 103 and a protective diode 11 are connected in parallel to the other end of a microstrip line 104 of which one end is connected to a gate 102g or drain 102d of FET102. The other ends of capacitor 103 and protective diode 11 are connected to a base plate for grounding by a bonding wire 12 and a source electrode 102s of FET 102 is also connected to the base plate with the bonding wire 12. Therefore, the protective diode 11 is connected, from the view point of DC element, between the gate 102g and source 102s or between the drain 102D and source 102s. Thereby, even when an overcurrent is applied to the gate 102g or drain 102d, it is absorbed by the protective diode 11 and FET is protected from electrical breakdown.
|
