| 摘要 |
<p>PURPOSE:To contrive the improvement of the heat dissipation property of a semiconductor substrate by a method wherein the semiconductor substrate is provided with such an insulating layer as an Al oxide layer or an Al nitride layer, which is formed on the whole outer surface of a semiconductor substrate main body and is used as an insulating coat, and a copper layer formed on the upper surface of the insulating layer. CONSTITUTION:A semiconductor substrate main body 1 is formed and such an insulating layer 2 as an Al oxide layer or an Al nitride layer, which is used as an insulating coat whose surface is formed into a rough surface, is formed on the whole outer surface of the semiconductor substrate main body 1. Then, after a copper layer 3 is formed on the upper surface of the insulating layer 2, a surface treatment is performed and a semiconductor substrate 4 is formed. The semiconductor substrate main body 1 has a thickness of 0.08-several mm, for example, and also, is formed of a hoop material 8 consisting of Al of the prescribed size. As aluminum is used for the semiconductor substrate main body in such a way, the heat dissipation property of the semiconductor substrate is good and the durability can be improved.</p> |
