| 摘要 |
PURPOSE:To stably read a picture by processing a signal with a photodetector for a reference setting formed of the same material as a photoelectric transducer for image reading as a load resistance. CONSTITUTION:The photodetector for reference setting 7 is installed at a position in the direction of main scanning adjacent to a picture reading photodetector array 8, and the photodetector for reference setting 7 is made of the same material and made by the same manufacturing process and similar constitution as the photoelectric transducer that forms the picture reading photodetector array 8. The picture reading photodetector array 8 is arranged at a position facing an original 4 through a rod lens array 2. Photoelectric current from the picture reading photodetector array is replaced by voltage values at both ends of a load resistance connected in series, and taken out as electric signals. A CdSe photoconductive film that forms a planer type comb-line electrode obtained by the same material and the same manufacturing process as the photoelectric conversion film is used as the load resistance. This is named as the photodetector for reference setting 7, and light corresponding to the white original is irradiated on the photodetector for reference setting 7 at all times.
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