| 摘要 |
PURPOSE:To obtain a reproducible semiconductor leser so that the laser emits its highly efficient and uniform beams in the different directions to one another by holding a super lattice as a part of respective structure elements and employing a semiconductor laser that is prepared by a MBE or MOCVD system. CONSTITUTION:Four laminations comprising N-type GaAs 22, N-type Al0.4Ga0.6 As 23, non-doping GaAs, and Al0.2Ga0.8As are performed repeatedly in sequence on an N-type GaAs substrate 21 and finally an active area 24 is formed by laminating GaAs. In addition, P-type Al0.4Ga0.6As 25 are GaAs 26 are formed by a molecular beam epitaxy system. After etching up to just this side of the active layer 24 in order to limit an area applied by an electric current, a nitriding silicon film 27 is formed by a plasma CVD system and only the top part of ridge is processed by etching, resulting in the formation of Cr-Au ohmic electrode and also, resulting in the formation of five independent electrodes 11d-15d after separating them by etching. Then, an Au-Ge electrode is vapor deposited as an ohmic electrode 29 for N type to cleave resonance faces 16 and 17 after performing a heat treatment.
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