| 摘要 |
PURPOSE:To simplify a removing operation of impurities or defects of semiconductor products by forming a degenerated layer in a beveled part of a silicon wafer and making it function as a gettering neucleus. CONSTITUTION:After a silicon wafer 6 whose circumferential edge is beveled is put on a supporting plate 4 with its rear surface 6a directed up, the plate 4 is rotated to rotate the wafer 6. The circumferential edge of the silicon wafer 6 which is rotating is irradiated with laser beams from a gun 5 so that the edge part is fused and cured in a minute time. Thus, the circumferential edge of the silicon wafer 6 is degenerated to form fused marks 7 which function as gettering neuclei. Then, through the total heat experience during a later step, defects or impurities in the silicon wafer 6 are attracted by the fused marks 7 and gettering is effected. After that, when the wafer is cut into each semiconductor, a beveled part 3 is removed from semiconductor products 9. Accordingly, the defects and impurities are also removed.
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