| 摘要 |
1. Interconnection device between the cells of an integrated hyperfrequency circuit pre-implanted in a semiconductor material (11), the cells being formed of active and passive components comprising metallizations on the upper surface of the semiconductor material chip, this interconnection device being characterized in that the coupling between a component (T1) of a first cell and a component (T2) of a second cell is capacitive, and in that it is embodied by : - at least one microstrip (6) in ohmic contact with a metallization (3) of the first component (T1) and at least one microstrip (5') in ohmic contact with a metallization (2') of the second component (T2), said microstrips being carried by the upper surface of the semiconductor material, - at least one insulating layer (12) deposited on the upper surface of the semiconductor material (11) and on the microstrips (5', 6) carried thereby, - at least one microstrip (9) carried by the insulating layer (12), said microstrip partially covering the microstrips (5', 6) carried by the semiconductor material (11) to form a capacitive connection. |
