| 摘要 |
PURPOSE:To increase an yield of a MOS capacitor by raising a temperature of a cleaning liquid so as to remove particles on a surface of a semiconductor substrate during manufacturing steps. CONSTITUTION:A semiconductor substrate is cleaned in a 80-85 deg.C heated mixed solution of pure water, ammonium water, and hydrogen peroxide. By raising a temperature of the cleaning liquid, etching of a surface SiO2 or silicon is promoted to an extent that a surface roughness is not produced and a rate for removing particles deposited on the surface increases. Thus, a decline of yield due to the particles can be prevented.
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