| 摘要 |
<p>An insulation method integrated circuits, in particular with MOS and CMOS devices, reducing the minimum distance between the active regions up to the lithographic limit, regardless of the geometry of the field areas, comprises forming, in a semiconductor substrate, trenches having a reduced width, which delimit the active regions of the circuit and the extended field areas, filling the trenches with insulating material and local surface oxidating the field areas.</p> |
