| 摘要 |
The thickness ratio of the layers produced cannot be controlled well in conventional processes for nitriding and siliciding metal layers on silicon substrates. A process is therefore to be provided in which the layer thicknesses can be adjusted. A process for producing a semiconductor device has the steps of depositing a heat-resistant metal layer (2) on a silicon substrate (1), nitriding the metal layer (2) down to a desired depth with a plasma (6) containing nitrogen at a lower temperature without causing the siliciding of the metal layer (2), and then siliciding the remaining deeper portions of the metal layer (2) by means of a heat treatment. Such processes are used to form terminals in semiconductor components. <IMAGE>
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