发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To read out a PROM data without increasing external terminal pins even when plural sets of PROMs exist by adding a gate function to the output buffer circuit of a PROM storing a defective address. CONSTITUTION:If the transistor Q10 of the buffer circuit 30A is turned off by a control circuit 26 that operates in response to an output prohibiting signal, the transistors Q1 and Q2 of a current switch are respectively turned on and off. Accordingly, the PROM storing a defective address 20 can not output its content to a common reading circuit 28 via the circuit 30A. It is the same as with a PROM 22, and only the content of the selected ROM 20 or 22 is read out by the circuit 28. As a result, at the time of such as a reading for content-updating, the reading of the PROM can be executed without increasing the external terminal pins even when the plural PROMs exist on the same chip.
申请公布号 JPS62266800(A) 申请公布日期 1987.11.19
申请号 JP19860109268 申请日期 1986.05.13
申请人 FUJITSU LTD 发明人 AWAYA TOMOHARU
分类号 G11C29/00;G11C29/04 主分类号 G11C29/00
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