| 摘要 |
PURPOSE:To form an inclination at an opening entrance part with high accuracy by etching a semiconductor substrate and a resist comprising a recess corresponding to the opening and covering the opening, at the same time by plasma etching. CONSTITUTION:A resist 1 is spread over a semiconductor substrate 2 in a manner it forms a recess corresponding to an opening of the substrate. At this time, a thickness of the resist 1 becomes thinner at an entrance part of the opening. Next, plasma etching is performed under the conditions that the semiconductor substrate 2 and the resist 1 are etched simultaneously. After the etching, the resist 1 is removed to obtain an inclination at the opening entrance part. By this method, the inclination can be formed with high accuracy and equipments regarding an etchant becomes unnecessary.
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