| 摘要 |
PURPOSE:To remove the state of discontinuity of the interface of a base region and an emitter region and to contrive accomplishment of high-speed operation of the title semiconductor device by a method wherein the emitter region is formed with SiC, a collector region is formed with Si, the base region of a heterojunction bipolar transistor is formed with Si1-xCx, and the variable (x) is continuously varied within a specific range. CONSTITUTION:The variable (x) of the composition of a base region continuously varies in the range of 1/2-0 on the area ranging from an emitter region 1 to a collector region 3. The state of discontinuity is not generated between the regions 1 and 2, because x=1/2 is the condition of Si. Also, as x=0 is the condition of Si, no discontinuity is generated between regions 2 and 3. Consequently, power consumption can be economized, and also a conduction band is inclined from the emitter region 1 toward the collector region 3 in the base region 2, the electric field acceleration effect of electrons is generated, and the transmit time of the base can be cut down.
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