| 摘要 |
PURPOSE:To prevent a silicon substrate from being corroded in a silicifying reaction by nitriding a high melting point metal film on the substrate from its surface in desired depth by using a plasma including nitrogen element at low temperature, and then silicifying it by heating. CONSTITUTION:A plasma 6 is generated by using gas containing, for example, N2 or NH3, and a titanium film 2 is so nitrided from its surface in desired depth at low temperature of the degree for not silicifying the titanium film to form a titanium nitride film 4. The titanium layer 2 remaining without nitriding is thereafter converted by heating together with a silicon substrate to a titanium silicide film 3. Thus, the film 2 is converted by individual steps of plasma-nitriding it at low temperature and thereafter silicifying it by heating into a 2-layer structure of the films 4 and 3 to obtain the films 4 and 3 having arbitrary thickness ratio.
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