| 摘要 |
PURPOSE:To form fine dual gates, a space thereof is narrow, easily while improving characteristics by forming a slit pattern through electron beam exposure, evaporating an insulating material on the slit pattern and forming a pattern for separating the gates on an N type GaAs layer and shaping a gate metal pattern. CONSTITUTION:An N type Ga-As layer 2 is formed on a semi-insulating GaAs substrate 1, ohmic patterns 3,3' are formed on the layer 2, a resist 4 is applied on the patterns 3,3', and a slit pattern 5 for shaping gates is formed through electron beam exposure. SiO26 is evaporated and air gaps 8 are shaped on both sides of a pattern 7, and Au gate metal patterns 9,10 are formed to the air gap 8 sections through the electroplating of Au. When SiO26 and the pattern 7 for separation are removed through etching, the gate metal patterns 9,10 are separated completely to each other. Dual gates are completed by exfoliating the resist 4. |
