| 摘要 |
PURPOSE:To obtain a bipolar-transistor, the degree of integration thereof is improved, and to increase gains and working speed by selectively etching a metal or a metallic silicide film of the periphery of the edge of a resist film to form two second openings and forming base contact holes continuing to the openings. CONSTITUTION:A silicon dioxide film 2, a silicon nitride film 3 and a metallic silicide such as a molybdenum silicide layer 4 are formed on the surface of a collector region 1 combining an N type silicon substrate through thermal oxidation. A sample in which a resist film 5 is patterned is arranged in a parallel plate type reactive ion etching device, and a mixed gas of oxygen and carbon tetrachloride is introduced and the sample is etched. Openings (base contact holes) 7 in 0.2-0.3mum width are formed to the film 3 and the film 2 through reactive ion etching while using the patterned metallic silicide layer 4 and the resist layer 5 as masks. A polycrystalline Si layer 9 to which B is doped is formed. An emitter electrode 12 is formed, and As in the emitter electrode 12 is diffused to one part of a P type base region, thus forming an N<+> type emitter region 13. |
