| 摘要 |
PURPOSE:To prepare a Schottky barrier having excellent characteristics, and to attain the effect of an improvement in characteristics in response to an FET, etc. by utilizing a semiconductor, which does not perform a lattice alignment but can form the high Schottky barrier, in opposition to a semiconductor, which can form only a low Schottky barrier. CONSTITUTION:An n type InGaAs layer 2 on a semi-insulating InP substrate 1 functions as a layer constituting an active channel for an FET, and represents an epitaxial growth layer consisting of a single crystal of In0.52Ga0.48As lattice-aligning with InP. The thickness of single one layer is each limited to approximately 100Angstrom at a maximum in an InGaAs layer and a GaAs layer in superlattice structure 3, and repeated laminated structure of desirably, approximately several dozen layers of at leat two layers or more is formed so that thickness in an extent that electrons do not generate tunnelling is obtained in the whole superlattice structure. The composition of the InGaAs layer may be the same as an active layer, but it may be changed gradually into a composition of In0.2Ga0.8As. A GaAs layer is used as an uppermost layer. A control electrode 4 forming a Schottky junction is made of a metal such as Al. |
