| 摘要 |
PURPOSE:To inhibit the heat generation of FETs due to switching loss by driving each of first and second MOSFET pairs connected in series with a power supply by first and second switching elements and displaying high-speed switching characteristics. CONSTITUTION:FET pairs 29a, 29b connecting a drain D for a P channel type FET 3a and a drain D for an N channel type FET 19a are connected in parallel between both poles of a main power supply 1, and a motor 8a for an actuator is connected between the nodes of each drain D. Drive circuits 17a, 17b for the FETs 3a, 3b are constituted of transistors(hereinafter called Tr) 4-7, diodes 9-12, etc., and drive circuits 18a, 18b for FETs 19a, 19b are also organized of Trs 27-28, 30, etc. When the FET 3a is turned ON at that time, the Tr 4 is turned OFF and the Tr 5 is turned ON. A reverse bias is applied to the Tr 6 only by a forward voltage section between a base and an emitter for the Tr 7 at that time, and the Tr 6 previously turned ON at the time of the OFF of the FET 3a can be turned OFF at high speed. |
