发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the increase of the areas of wiring substrates even when the number of LSI chips loaded for enlarging a functional scale is increased by arranging a plurality of first wiring substrates under a mutually laminated state at angles where the main surfaces of the first wiring substrates cross with the main surface of a second wiring substrate. CONSTITUTION:A plurality of semiconductor chips 11 having active functions consisting of P-N junctions are disposed onto a plurality of first wiring substrates 13 having wirings mutually connecting and compounding the active functions of these semiconductor chips 11 and external electrodes extracting the active functions to the outside. A plurality of these wiring substrates 13 are disposed onto a second wiring substrate 14 with wirings mutually connecting and compounding the external electrodes for the first wiring substrates 13 under a mutually laminated state at angles where the main surfaces of the wiring substrates 13 cross with the main surface of the second wiring substrate 14. The second wiring substrate 14 is connected and fastened onto an insulating substrate 16 with external pins 18 fixing and holding functions acquired by said semiconductor chips 11, the first wiring substrates 13 and the second wiring substrate 14 and transmitting the functions over the outside.
申请公布号 JPS62260354(A) 申请公布日期 1987.11.12
申请号 JP19860105326 申请日期 1986.05.06
申请人 MITSUBISHI ELECTRIC CORP 发明人 YOSHIDA MIYOSHI
分类号 H01L23/52;H01L23/538;H01L25/00;H01L25/065;H05K1/14 主分类号 H01L23/52
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