| 摘要 |
PURPOSE:To obtain the title target having especially an excellent stepped part covering characteristic and used for a planar magnetron-type sputtering device by providing a groove determined by the radius of gyration of an electron and the thickness of the cathode dark space of electric discharge. CONSTITUTION:The movement of an electron in the space surrounded with >=1 couple of opposed side wall faces 102 formed with protrusions 101 and the sputter face 201 of a target 1 against the directivity of sputtered particles are shown in the figure. Namely, a tunnel-like magnetic field is generated on the face 201, the opposed faces 102 are arranged in the direction to traverse a magnetic flux, and the potentials of the target 1 to be used as a cathode in sputtering and the protrusions 101 are equalized. The space forms a closed loop on the target 1 along the tunnel of the magnetic flux. The electron in the space repeats spiral, drifting, and repulsing movements in relation to the magnetic flux and electric field. When the electron approaches the side wall 102 or target 1, the electron is repulsed as a result of the high negative potentials of the side wall face 102, the target 1 and pushed back to the central part of the space, and hence further stronger plasma is continuously generated. |
