| 摘要 |
PURPOSE:To obtain a high-uniformity semiconductor crystal which is not scattered in both composition and film thickness, by installing a flow guide between a quartz-made susceptor holder and a raw material gas introduction port in a CVD device in which a horizontal-type reaction furnace is used. CONSTITUTION:A quartz glass-made horizontal-type reaction tube 5 is equipped inside with a quartz-made susceptor holder 2, which is linked with a carrier syetem and equipped inside with a graphite-made susceptor 1. A single-crystal substrate 3 is placed on the susceptor 1. The upper part of the single-crystal substrate is heated from the side plane of the reaction furnace by using a high- frequency heating furnace, an infrared furnace, a resistance heating furnace 4 or the like, so that epitaxial growth of the raw material is generated on the substrate together with its decomposition. When a quartz-made flow guide 6 is installed on the introduction port and the quartz-made susceptor holder in this reaction furnace, the raw material gas supplied into the reaction tube can attain to the upper part of the substrate, with a smooth pattern in which its flow is not disturbed.
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