| 摘要 |
PURPOSE:To prevent a defect such as an electromigration or the like from occurring by providing aluminum alloy wirings which contain an element for forming a compound with a silicon as an additive, and interposing the nitride of a transition metal between the wirings and a silicon substrate. CONSTITUTION:An insulating film 11 is formed on an Si substrate 10 formed with a diffused layer 17, a hole is opened at electrode 15, sequentially covered with layers 16, 12-14, and the layers 14, 13, 12, 16 are successively etched. Here, the layers 12, 14 are Al2%-Si alloy layer, and TiN, ZrN of the layer 16 are formed by reactive sputtering method of Ti or Zr in mixture gas of N2 gas. Thus, it can effectively prevent a defect such as electromigration due to miniaturization of wirings, and also prevent the wirings from reacting with Si at the electrodes.
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