| 摘要 |
PURPOSE:To simply measure an impurity distribution by storing an impurity distribution shape and beam variation data actually measured corresponding to the shape, retrieving past data similar to the beam variation data measured for an object of unknown distribution, and presuming unknown distribution by interpolating means therefrom. CONSTITUTION:when an infrared laser beam 220 is incident at an angle theta on a semiconductor formed at a point A 210 on a wafer 200, the amplitude and the phase of reflected beam are varied with respect to the incident light due to the influence of the depthwise distribution of an impurity on the point A. when this fact is used to presume the impurity distribution at the point A reversely from the beam variation amount, known impurity distribution and measuring information on the beam variation amount based on the known distribution are stored, stored information is retrieved by the actually measured information on the beam variation obtained with respect to the unknown impurity distribution, and the unknown impurity distribution is presumed from the retrieved information and the actually measured information. Thus, a simply semiconductor impurity measuring apparatus is obtained to be readily performed.
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