| 摘要 |
PURPOSE:To enable the fine work of a semiconductor memory device with high reliability by interposing a high melting point metal or its compound film between a capacitor electrode and the contact of a substrate. CONSTITUTION:A groove 3 which arrives at a substrate 1 is formed at the capacitor forming region of a wafer, and a capacitor electrode 61 is formed through a capacitor insulating film 4 on a region which contains the groove. The electrodes 61 are independently provided at every memory cell to become a storage node. A repeating electrode 62 for connecting a bit line with the substrate is formed of an impurity-doped first polycrystalline silicon film simultaneously with the electrode 61, a capacitor insulating film is removed at the electrode 61 and the connection unit of the electrode 62 with the substrate, and a tungsten silicide(WSi2) film 5 is formed thereat. A bit line 13 made of aluminum film is arranged on an interlayer insulating film, and the line 13 is connected with the electrode 62 through a contact hole 12 formed at the insulating film 11. |
