发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain an accurate reference coordinates in an LSI at high S/N by providing a marker of 2-layer structure on an LSI chip with conductive material, and applying different potentials to the conductors of the two layers. CONSTITUTION:A region 1 of a first layer is formed of a conductive material on a semiconductor substrate, an insulating film is then formed on the conductive region 1 of the first layer, crossing wiring regions 2 are formed of a material, such as polysilicon or aluminum on the second layer thereon, and a hole 3 is opened to expose the region 1 of the first layer including the crossing point. The layers 1, 2 are so connected to power sources VDD, VSS in the LSI to become opposite potentials. An output waveform 12 obtained by this becomes good S/N to obtain reference coordinates at high S/N.
申请公布号 JPS62259440(A) 申请公布日期 1987.11.11
申请号 JP19860102460 申请日期 1986.05.02
申请人 TOSHIBA CORP 发明人 ISHIKAWA MITSUAKI
分类号 H01L21/027;H01L21/30 主分类号 H01L21/027
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