发明名称 |
FORMATION OF THIN FILM |
摘要 |
PURPOSE:To prevent a reactive product thin film from forming on an ultraviolet light transmission window without coating oil or the like by applying a bias voltage of a discharge starting voltage or lower to a first electrode and a second electrode provided on the window or near the window or ultraviolet light source. CONSTITUTION:A power source 11 is so provided as to apply a bias voltage to between a first electrode 4 and a second electrode 2 provided on an ultraviolet light transmission window or near the window or ultraviolet light source. Ion species or active species slightly charged in which reactive product contained in reaction gas becomes solid is separated from the window 5 or near the light source 6 by a bias voltage applied to between the electrodes 4 and 2. Thus, an optical CVD method can be applied to a wide semiconductor device to simply obtain a semiconductor device having preferably boundary characteristic without damage on a base of the feature of the optical CVD method.
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申请公布号 |
JPS62259426(A) |
申请公布日期 |
1987.11.11 |
申请号 |
JP19860095597 |
申请日期 |
1986.04.24 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
IMATO SHINJI;YAMAZAKI SHUNPEI;MISEMURA YUUJI;TASHIRO MAMORU;URATA KAZUO;ITO KENJI;OTAKA MASAICHI;HAMAYA TOSHIJI |
分类号 |
H01L21/205;C23C16/48;H01L21/263;H01L21/304;H01L21/31 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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