| 摘要 |
PURPOSE:To prevent an insulating film from damaging or deteriorating by supplying neutral high speed particles and reactive gas which contains halogen as constituent atom from independent supply sources to the surface of a sample. CONSTITUTION:A vacuum tank 4 having approx. 50cm of length is disposed in front of an ion source 1, and a material 5 to be etched is disposed oppositely to the source 1. Ar<+>ions led from the source 1 to an electrode 2 are mostly neutralized by charge exchange reaction with Cl2 on the way to the sample 5, but the remaining Ar<+>ions exist without neutralization, and a deflecting plate 8 deflects the remaining ions so as not to be incident on the sample. Thus, it can prevent the withstanding voltage of a thin insulating film during etching from deteriorating. This effect is specially large when the energy of neutral high speed particles incident on the sample during etching is reduced to 500eV or lower.
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