| 摘要 |
PURPOSE:To eliminate the change in the characteristic of bubble holding region by ion implantation by forming a magnetic garnet film so as to have a partially decreased thickness and subjecting said region to deep ion implantation to form an intra-surface magnetized region. CONSTITUTION:The magnetic garnet film 1 formed on a nonmagnetic garnet substrate 2 is partly thinly formed. The region is thereafter subjected to the deep ion implantation to the extent that the ions arrive at the substrate 2 to form the intra-surface magnetized region 3. A charged wall 4 is generated by impressing an intra-surface magnetic field to said region and a magnetic bubble can be driven by the magnetic pole of the charged wall. Since the ions are not implanted to the region where the magnetic bubble 5 exists according to such element constitution, the instability of the bubble is obviated.
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