| 摘要 |
PURPOSE:To enable to planely emit a strong light by distributed feedback resonance of single vertical mode by alternately laminating active semiconductor layers and p-m junction semiconductor layers in different combinations of III Group elements and V Group elements. CONSTITUTION:Active semiconductor layers 10 formed in combinations of crystal growing III Group elements and V Group elements in an active region by the concentration of carrier for emitting a light, and P type and N type semiconductor layers 50, 60 similarly formed in combination of crystal growing III Group elements and V Group elements for flowing a current to both ends of a semiconductor device of a multilayer structure laminated in multistage of p-m junction layers 50, 60 contributing to the implantation of a current are formed on a semiconductor. A thin metal electrode layer which operates as a reflecting mirror is formed on both ends of a transparent semiconductor device of such a structure, a voltage is applied, thereby producing a single vertical mode light emission resonated with the periodic variation with the refractive index and light amplifying gain by the alternately laminated active semiconductor layers and the P-N junction semiconductor layers. |
