发明名称 Amorphous silicon devices and method of producing
摘要 An amorphous silicon material fabricated by a magnetically aligned glow discharge. A junction leg (e.g., electrostatic barrier) can be formed between two adjacent semiconductor layers by forming a first semiconductor layer by glow discharge deposition in the presence of a first magnetic field to form a first layer with a first orientation, and by forming a second semiconductor layer by glow discharge deposition in the presence of a second magnetic field to form a second layer with a second orientation different from the first orientation, with the barrier being formed between the two layers having different orientations.
申请公布号 US4705913(A) 申请公布日期 1987.11.10
申请号 US19860850083 申请日期 1986.04.09
申请人 CAMPBELL, III, WILLIAM P. 发明人 CAMPBELL, III, WILLIAM P.
分类号 C23C16/50;H01L31/06;H01L31/20;(IPC1-7):H01L31/06;H01L21/205 主分类号 C23C16/50
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