发明名称 |
Amorphous silicon devices and method of producing |
摘要 |
An amorphous silicon material fabricated by a magnetically aligned glow discharge. A junction leg (e.g., electrostatic barrier) can be formed between two adjacent semiconductor layers by forming a first semiconductor layer by glow discharge deposition in the presence of a first magnetic field to form a first layer with a first orientation, and by forming a second semiconductor layer by glow discharge deposition in the presence of a second magnetic field to form a second layer with a second orientation different from the first orientation, with the barrier being formed between the two layers having different orientations.
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申请公布号 |
US4705913(A) |
申请公布日期 |
1987.11.10 |
申请号 |
US19860850083 |
申请日期 |
1986.04.09 |
申请人 |
CAMPBELL, III, WILLIAM P. |
发明人 |
CAMPBELL, III, WILLIAM P. |
分类号 |
C23C16/50;H01L31/06;H01L31/20;(IPC1-7):H01L31/06;H01L21/205 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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