发明名称 METHOD OF FORMING AN INSULATOR ON A PATTERNED CONDUCTIVE LAYER
摘要 <p>12 "Method of forming an insulator on a patterned conductive layer." A structure having a substantial planar surface is created by a method in which an insulating layer (24) that has an upward protrusion (26) is formed on a patterned conductive layer (20) having a corresponding upward protrusion (22). An additional layer (28) having a substantially planar surface is formed on the insulating layer. Using an etchant that attacks the additional layer much more than the insulating layer, the additional layer is etched to expose at least part of the insulating protrusion. The additional layer and the insulating layer (as it becomes exposed) are then etched with an etchant that attacks both of them at substantially the same rate. This brings the upper surface down without exposing the conductive layer, particularly its upward protrusion.</p>
申请公布号 CA1229180(A) 申请公布日期 1987.11.10
申请号 CA19850483809 申请日期 1985.06.12
申请人 N.V.PHILIPS'GLOEILAMPENFABRIEKEN 发明人 ELLWANGER, RUSSELL C.
分类号 H01L21/3213;H01L21/3105;H01L21/311;H01L21/3205;(IPC1-7):H01L21/465 主分类号 H01L21/3213
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