发明名称 |
METHOD OF FORMING AN INSULATOR ON A PATTERNED CONDUCTIVE LAYER |
摘要 |
<p>12 "Method of forming an insulator on a patterned conductive layer." A structure having a substantial planar surface is created by a method in which an insulating layer (24) that has an upward protrusion (26) is formed on a patterned conductive layer (20) having a corresponding upward protrusion (22). An additional layer (28) having a substantially planar surface is formed on the insulating layer. Using an etchant that attacks the additional layer much more than the insulating layer, the additional layer is etched to expose at least part of the insulating protrusion. The additional layer and the insulating layer (as it becomes exposed) are then etched with an etchant that attacks both of them at substantially the same rate. This brings the upper surface down without exposing the conductive layer, particularly its upward protrusion.</p> |
申请公布号 |
CA1229180(A) |
申请公布日期 |
1987.11.10 |
申请号 |
CA19850483809 |
申请日期 |
1985.06.12 |
申请人 |
N.V.PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
ELLWANGER, RUSSELL C. |
分类号 |
H01L21/3213;H01L21/3105;H01L21/311;H01L21/3205;(IPC1-7):H01L21/465 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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