| 摘要 |
PURPOSE:To smooth the surface of a first substance layer efficiently by forming a second substance layer, which has a composition different from the first substance layer and an etching rate approximately the same as the first substance layer, onto the first substance layer with a stepped section so that the surface is flattened and etching the second substance layer until said composition is not detected. CONSTITUTION:Insulating films 2 consisting of an Si oxide are shaped partially to the surface of an Si semiconductor substrate 1, and an Si single crystal semiconductor layer is formed, using exposed sections 3 in the substrate 1 as seeds. A photo-resist film 5 is applied onto the surface of the layer 4, and the surface of the film 5 is flattened by turning the substrate 1. The film 5 and the layer 4 on the substrate l are etched in an anisotropic manner. The presence of the precipitation of carbon as a structure precipitated into an etching atmosphere from the inside of the film 5 is investigated. Accordingly, the existence of the film 5 on the film 4 is checked during etching, and the state in which the film 5 is removed completely and a semiconductor surface is perfectly etched flatly can be brought about.
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