发明名称 THERMAL TREATMENT EQUIPMENT FOR SEMICONDUCTOR WAFER
摘要 PURPOSE: To reduce the area of conduction, to lower the quantity of thermal leakage and to minimize power consumption required for heat treatment by supporting a heater and a soaking pipe by a hollow discoid strength member, to the base of which a plurality of pipe structures are mounted. CONSTITUTION:Heavy substances, such as a heater 5, a soaking pipe 4, etc. are received by a strength member in the lower surfaces of fire bricks, and the strength member is constituted by unifying a hollow disk 13, a pipe structure 14 and a base fitting 15. Compressive stress is received by the structure 14 positioned near the heater 5 and brought to a high temperature and bending stress by the metal fittings 15, heat of which is robbed by a heat-insulating material 6 and a temperature of which is elevated, respectively in stress in the strength member. Buckling strength is increased, a sectional area in charge of load is reduced and a sectional area regarding thermal conduction is minimized in the structure 14 at that time. Accordingly, the quantity of leakage of heat to the outside of a device is lowered, thus reducing power consumption required for heat treatment.
申请公布号 JPS62257722(A) 申请公布日期 1987.11.10
申请号 JP19860100941 申请日期 1986.05.02
申请人 HITACHI LTD 发明人 TANAKA TAKEO;HIRASAWA SHIGEKI;TAKAGAKI TETSUYA;UCHINO TOSHIYUKI
分类号 H01L21/205;H01L21/22;H01L21/31 主分类号 H01L21/205
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