| 摘要 |
PURPOSE:To purify an organometallic compound by a simple device in high productivity and effectively and to obtain a high-purity organometallic compound useful as a material for epitaxial growth for producing metallic compound semiconductors, by bringing the organometallic compound into contact with active carbon. CONSTITUTION:An organometallic compound such as trimethylaluminum, etc., is brought into contact with active carbon (preferably granules having 10-80 meshes) to purify the organometallic compound. Preferably the contact treatment is usually carried out by dissolving the crude organometallic compound in an organic solvent inert to the active carbon and passing the solution through a column packed with the active carbon. Active carbon which is dried and has adhesive moisture as low as possible is preferable as the active carbon. The amount of the active carbon used is preferably 10-50pts.wt. based on 100pts.wt. organometallic compound.
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