发明名称 |
Memory device with interconnected polysilicon layers and method for making |
摘要 |
A memory device, based upon a field effect transistor having a floating gate is constructed for use in a silicon integrated circuit array of similar memory devices. The memory device includes only two polysilicon layers, a portion of each polysilicon layer being connected to each other through a via hole in an intervening silicon dioxide layer to form the floating gate.
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申请公布号 |
US4706102(A) |
申请公布日期 |
1987.11.10 |
申请号 |
US19850795810 |
申请日期 |
1985.11.07 |
申请人 |
SPRAGUE ELECTRIC COMPANY |
发明人 |
PAN, DAVID S.;SARMA, KANAK C.;HALFACRE, MARK A.;OWENS, ALEXANDER H.;ROSIER, BRIAN K. |
分类号 |
H01L23/532;H01L29/788;(IPC1-7):H01L29/78;G11C11/34;H01L27/02;H01L29/04 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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