| 摘要 |
PURPOSE:To improve the shape of an etched groove, eliminate irregularity of etching and avoid the variation of etching rate in the surface of an element or when a deep groove is formed by a method wherein plasma etching gas or the like is made to flow in an etching chamber so as to form a linear steady streamlined flow. CONSTITUTION:A straight line connecting the center of a plasma gas inlet 4 and the center of an exhaust outlet 6 of reacted gas is so arranged as to be in parallel to the surface of an element 7 to be etched. In other words, the flow of the plasma etching gas is parallel to the surface of the element 7 and the flow in an etching chamber is made to be steady and linear and the element 7 to be etched is put in the streamlined flow of the etching gas. With this constitution, metabolism between the plasma etching gas and the reacted gas near the surface of the element or in a groove formed in the element can be improved and the ununiformity of the etching rate in the surface of the element and so forth can be improved.
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