| 摘要 |
PURPOSE:To obtain the title high-quality single crystal by impressing a DC magnetic field almost at right angles to the current generated by the heat convection of a melt and preventing said current when the single crystal is pulled by the CZ method from the melt obtained by heating an electrically conductive substance. CONSTITUTION:The single crystal of the conductive substance is grown by the following three steps (a)-(c). Namely, (a) the conductive substance (e.g., polycrystal silicon) is heated (heater 15) and melted (melt 12) in a cylindrical crucible 11, (b) a DC electric field (lines of magnetic flux 19 of coil 17) is impressed almost at right angles to the current of the melt 12 which is generated by the heat convection, ascends in the vicinity of the side wall of the crucible 11, proceeds to the inside in the radial direction of the crucible 11 in the vicinity of the surface of the melt 12, descends at the site remote from the side wall, and proceeds to the outside in the radial direction in the vicinity of the bottom part of the crucible 11, and (c) a single crystal 13 is pulled up from the melt 12. |
