| 摘要 |
PURPOSE:To prevent the Si substrate alloying reaction to Al due to unfavorable coating property of TiN from occuring by a method wherein a good junction layer is formed by burying a contact hole formed due to scraping with polycrystalline Si in a selfalignment manner and then inside of the contact hole that has come to have no excessive recession is coated with TiN. CONSTITUTION:An isolation region 2 comprising SiO2 is formed on the surface of P type Si substrate 1 and then an impurity region 3 is formed by ion implantation while a phosphorus silicate glass 4 is formed by chemical vapor growth. A contact hole reaching the surface of Si substrate is made using a resist 5 as a mask while a polycrystalline Si 6 is buried in the hole by low pressure chemical vapor growth and then phosphorus 7 is ion-implanted to form a phosphorus layer 8. Later, after annealing process, an excellent and deep N<+> diffused region 9 is formed in selfalignment below the contact hole using the rapid impurity diffusion peculiar to the polycrystalline Si and then the polycrystalline Si 6 is coated with a TiN 10 as a buffer layer to prevent Al and Si from combining with each other finally after coating with Al 11, three layers of Al, TiN and polycrystalline Si are etched.
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