| 摘要 |
PURPOSE:To facilitate a high quality plasma treatment reducing damage such as breakdown of an insulating film by a method wherein an auxiliary electrode which can be withdrawn from and inserted into a treating chamber is provided close to an anode or a cathode in the treatment chamber and the plasma treatment is applied to a semiconductor substrate by a means which does not give damage to the substrate surface after the treatment of the semiconductor substrate comes close to finish. CONSTITUTION:If a radio frequency output is gradualy increased, a plasma state is spread in a whole treatment chamber (quartz chamber) 1. At that time, the plasma intensity is especially high between an auxiliary electrode 4 and an anode 2 and the plasma state is not uniform. Therefore, if the condition is realized under which the discharge can be maintained without the auxiliary electrode 4, the auxiliary electrode 4 is retreated to the position where the auxiliary electrode 4 has no effect on the discharge by the operation of a driving means 7. With this constitution, the breakdown phenomenon of an insulating film caused by a high voltage induced at the time of the closing of a radio frequency source can be avoided. Further, after the treatment of a semiconductor substrate comes close to finish of treatment, a plasma treatment is applied to the semiconductor substrate by a means which does not give damage to the semiconductor substrate surface.
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