| 摘要 |
PURPOSE:To extend the discharge time of a timer circuit by forming the 2nd circuit at a distance being the diffusion length of the 1st circuit. CONSTITUTION:A transistor (TR) capaciance circuit section 10 is provided adjacent to a semiconductor substrate 5 so as to be placed within the distance being the diffusion length of a VBB generating circuit section 30. When a clock signalphi1 reaches a high elvel, a gate of a TR 1 is opened and a current flows through the TR 1 from a positive power voltage Vcc, an electric charge is stored in a capacitor C1, and when the signal phi1 is at a low level, the gate of the TR 1 is closed and the capacitor C1 is disconnected from the power supply Vcc. On the other hand, when a signal phicp is supplied, a negative minority carrier is jumped to the substrate from a part 14 constituting a capacitor C2 at a node 2 by the operation of a TR 4 and spread within the diffusion length. Thus, the positive electric charge in the substrate of the capacitor C1 of the timer circuit is combined with the negative minority carrier jumped from the VBB generating circuit and the capacitor C1 is discharged, then the discharge time is very large in the semiconductor integrated circuit device used actually.
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