| 摘要 |
PURPOSE:To inhibit a change in composition and the occurrence of defects when a single crystal of a compound contg. an evaporable element is formed by a solid recrystallization method, by sealing an alloy ingot and a melt in an ampul and by carrying out recrystallization under specified conditions. CONSTITUTION:A mixture consisting of a prescribed percentage each of elements is melted to prepare a homogeneous molten compound, and this compound is cooled to form an alloy ingot having a number of grain boudaries. This alloy ingot 12 and a molten alloy 13 are put in an ampul 11 for recrystallization, and air in the upper space on the melt 13 is exhausted. The ampul 11 is then sealed and placed in a recrystallization furnace 15, where a single crystal is formed by a solid recrystallization method. Said melt 13 has a composition by which the ingot 12, the melt 13, and vapor 14 which is in contact with the melt 13 are brought into an equilibrium state at the recrystallization temp. For example, an Hg0.8 Cd0.2 Te crystal having 710 deg.C recrystallization temp. is formed, a melt having a composition consisting of Hg, Cd and Te in 0.415:0.035:0.55 ratio is used. |
